The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2006
Filed:
Jul. 30, 2004
Takashi Yoshitomi, Kamakura, JP;
Tatsuya Ohguro, Yokohama, JP;
Ryoji Hasumi, Yokohama, JP;
Hideki Kimijima, Yokohama, JP;
Takashi Yamaguchi, Kawasaki, JP;
Masahiro Inohara, Tokyo, JP;
Takashi Yoshitomi, Kamakura, JP;
Tatsuya Ohguro, Yokohama, JP;
Ryoji Hasumi, Yokohama, JP;
Hideki Kimijima, Yokohama, JP;
Takashi Yamaguchi, Kawasaki, JP;
Masahiro Inohara, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
At present, Cu (copper) is being used as a wiring material. In an RF-CMOS device as a combination of an RF analog device and CMOS logic device, two electrodes of a MIM capacitor are formed from Cu having a large diffusion coefficient. To prevent Cu from diffusing to the capacitor insulating film of the MIM capacitor, diffusion prevention films having a function of preventing diffusion of Cu are interposed between the capacitor insulating film and the two electrodes. As a result, Cu forming the electrodes does not diffuse to the capacitor insulating film.