The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2006
Filed:
Dec. 01, 2003
Applicants:
Tetsuo Kunii, Tokyo, JP;
Ryo Hattori, Tokyo, JP;
Hiroshi Kawata, Hyogo, JP;
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a semiconductor substrate having a principal plane on which gate, source, and drain electrodes are located. A film made of a polymer with a low dielectric constant is over the gate and drain electrodes to insulate the gate and drain electrodes from the source electrodes. A chip surface electrode located over the low-dielectric-constant polymer film and the source electrode, and connected to ground potential. The source electrode is provided with the ground potential through the chip surface electrode.