The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2006

Filed:

Apr. 18, 2003
Applicants:

Masanobu Senda, Aichi, JP;

Mitsuhiro Inoue, Aichi, JP;

Jun Ito, Aichi, JP;

Toshimasa Hayashi, Aichi, JP;

Kazuki Nishijima, Aichi, JP;

Naoki Shibata, Aichi, JP;

Inventors:

Masanobu Senda, Aichi, JP;

Mitsuhiro Inoue, Aichi, JP;

Jun Ito, Aichi, JP;

Toshimasa Hayashi, Aichi, JP;

Kazuki Nishijima, Aichi, JP;

Naoki Shibata, Aichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
Abstract

An insulation filmmade of SiOis formed on a p-type layerand a multiple thick film positive electrodewhich is a metal film formed through metal deposition, is formed on the insulation filmand on the p-type layerat the central portion of which has a window and is exposed. The insulation filmhas a thickness of one fourth multiple of emission wavelength. Thickness of the insulation filmis generally determined by multiplying one fourth of intramedium emission wavelength by an odd number. By interference effect, directivity of radiated light along the optical axis direction can be improved.


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