The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2006
Filed:
Sep. 30, 2003
Haoren Zhuang, Wallkill, NY (US);
Nicolas Nagel, Kanagawa-ken, JP;
Jenny Lian, Wallkill, NY (US);
Rainer Bruchhaus, Kanagawa-ken, JP;
Haoren Zhuang, Wallkill, NY (US);
Nicolas Nagel, Kanagawa-ken, JP;
Jenny Lian, Wallkill, NY (US);
Rainer Bruchhaus, Kanagawa-ken, JP;
Infineon Technologies AG, Munich, DE;
Abstract
A device and method for forming a capacitor device comprises forming a substrate, forming a first interlayer dielectric layer on the substrate and forming two or more contact plugs through the substrate. A conducting layer is formed on the first interlayer dielectric layer and an electrode is formed on alternate ones of the contact plugs by etching the conducting layer. The etched electrodes are then coated with a ferroelectric layer. The ferroelectric layer is etched from the surfaces separating the contact plugs and additional electrodes are created by filling the spaces between the electrodes on alternate ones of the contact plugs with a conductive material to establish electrical contact between the plugs and the electrodes.