The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2006
Filed:
Dec. 17, 2001
David Fraboulet, Quaix en Chartreuse, FR;
Denis Mariolle, Grenoble, FR;
Yves Morand, Grenoble, FR;
Commissariat a l'Energie Atomique, Paris, FR;
STMicroelectronics, Montrouge, FR;
Abstract
A method produces a microstructure comprising an island of material confined between two electrodes forming barriers, the island () of material having lateral flanks running parallel to and lateral flanks running perpendicular to the barriers, wherein the lateral flanks of the island are defined by etching of at least one layer (), called the template layer, and the barriers are formed by damascening. The method includes (a) a first etching of the template layer using a first etching mask having at least one filiform part, and (b) a second etching of the template layer, subsequent to the first etching, using a second etching mask also having at least one filiform part, oriented in a direction forming a non-zero angle with a direction of orientation of the filiform part of the first mask, in the vicinity of the site of formation of the island.