The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2006
Filed:
Dec. 31, 2003
Applicants:
Shigeru Kinoshita, Yokohama, JP;
Hiroaki Hazama, Yokkaichi, JP;
Inventors:
Shigeru Kinoshita, Yokohama, JP;
Hiroaki Hazama, Yokkaichi, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a nonvolatile semiconductor storage device which is electrically writable and erasable, a silicon substrate, a plurality of element isolation portions which project from the silicon substrate and are disposed at a predetermined interval, floating electrodes disposed between the isolation portions, and a control electrode laminated on the isolation portions and the floating electrodes are provided, and an interval between the adjacent floating electrodes is formed greater at the side away from the silicon substrate than at the silicon substrate side.