The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2006
Filed:
Jan. 06, 2004
Applicants:
Yi-chou Chen, Hsinchu, TW;
Hsiang-lan Lung, Hsinchu, TW;
Ruichen Liu, Hsinchu, TW;
Inventors:
Assignee:
Macronix Internation Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A process for fabricating phase-change elements having ultra small cross-sectional areas for use in phase change memory cells specifically and in semiconductor devices generally in which pads are implemented to create horizontally aligned phase change elements is disclosed. The elements thus defined may be used within chalcogenide memory cells or other semiconductor devices.
Chen, Yi-Chou. (2006). Horizontal chalcogenide element defined by a pad for use in solid-state memories (U.S. Patent No. 7038230). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7038230
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile