The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2006
Filed:
Mar. 11, 2003
Dong-jin Park, Osan-si, KR;
Jin-sung Kim, Suwon-si, KR;
Pil-kwon Jun, Yongin-si, KR;
Jin-ho Hwang, Suwon-si, KR;
Il-hyun Sohn, Suwon-si, KR;
Dong-jin Park, Osan-si, KR;
Jin-sung Kim, Suwon-si, KR;
Pil-kwon Jun, Yongin-si, KR;
Jin-ho Hwang, Suwon-si, KR;
Il-hyun Sohn, Suwon-si, KR;
Samsung Electronics Co., Ltd., Kyungki-Do, KR;
Abstract
A composition for stripping photoresist, methods of preparing and forming the same, a method of manufacturing a semiconductor device using the composition, and a method of removing a photoresist pattern from an underlying layer using the composition, where the composition may include an ethoxy N-hydroxyalkyl alkanamide represented by the formula, CHCH—O—R—CO—N—RROH, an alkanolamine and a polar material. Raw materials of alkyl alkoxy alkanoate, represented by a chemical formula of R—O—R—COOR, and alkanolamine, represented by a chemical formula of NHRROH, may be mixed to form a mixture, which is stirred and cooled to obtain the composition. The composition may balance exfoliation and dissolution of photoresist patterns, and may potentially eliminate thread-type residues from remaining on a surface of an underlying layer after removing the photoresist patterns.