The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2006
Filed:
May. 05, 2005
Kwon Hong, Kyoungki-do, KR;
Deok Sin Kil, Kyoungki-do, KR;
Kwon Hong, Kyoungki-do, KR;
Deok Sin Kil, Kyoungki-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
Disclosed is a method for forming a capacitor of a semiconductor device, which can ensure charging capacity required as well as an excellent leakage current characteristic. In such a method, a storage electrode consisting of TiN is formed on a semiconductor substrate. Then, a first HfO2 thin film, an HfxAlyOz thin film and a second HfO2 thin film are successively deposited on the storage electrode using Atomic layer Deposition (ALD) processes to form an HfO2/HfxAlyOz/HfO2 dielectric film. Finally, a plate electrode consisting of TiN is formed on the HfO2/HfxAlyOz/HfO2 dielectric film.