The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2006
Filed:
Feb. 09, 2004
Chin-cheng Chien, Hsin-Chu, TW;
Ya-lun Cheng, Taipei, TW;
Yu-kun Chen, Hsin-Chu, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method of forming a transistor involves firstly forming at least one gate structure on a semiconductor substrate. Then, a surface cleaning process is performed. In the surface cleaning process, a chemical oxidation method is utilized for forming a first oxide layer on a surface of the semiconductor substrate not covered with the gate structure and the first oxide layer is removed subsequently. Finally, a selective epitaxial growth method is utilized for forming a first epitaxial layer on the surface of the semiconductor substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile