The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Jul. 03, 2002
Ali Sadeghi, Foster City, CA (US);
Sukesh Patel, Sunnyvale, CA (US);
Mark Freeland, San Francisco, CA (US);
Ole Krogh, Belmont, CA (US);
Ali Sadeghi, Foster City, CA (US);
Sukesh Patel, Sunnyvale, CA (US);
Mark Freeland, San Francisco, CA (US);
Ole Krogh, Belmont, CA (US);
Ahsoon Technologies, Inc., Burlingame, CA (US);
Abstract
Systems and methods are provided that facilitate semiconductor processing, including etch processes. The invention provides real-time two-dimensional etch rate control. Prior to starting an etch process, a control model is selected that relates to the etch process. A formula or function description is developed from the model and solved to obtain process parameter values that are predicted to produce the desired etch rates. During the fabrication etch process, critical dimension measurements of a polysilicon gate are obtained. From these measurements, the etch process is modified so as to achieve a desired horizontal etch rate and a desired vertical etch rate. The etch process results in a polysilicon gate having a desired rectangular profile.