The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Nov. 21, 2003
Ping Xu, Fremont, CA (US);
Li-qun Xia, Santa Clara, CA (US);
Larry A. Dworkin, Sunnyvale, CA (US);
Mehul Naik, San Jose, CA (US);
Ping Xu, Fremont, CA (US);
Li-Qun Xia, Santa Clara, CA (US);
Larry A. Dworkin, Sunnyvale, CA (US);
Mehul Naik, San Jose, CA (US);
Applied Materials Inc., Santa Clara, CA (US);
Abstract
A method is provided for processing a substrate including treating a surface of a dielectric layer comprising silicon and carbon by exposing the dielectric layer comprising silicon and carbon to a plasma of an inert gas, and depositing a photoresist on the dielectric layer comprising silicon and carbon. The dielectric layer may comprise a first dielectric layer comprising silicon, carbon, and nitrogen, and a second layer of nitrogen-free silicon and carbon containing material in situ on the first dielectric layer, and a third dielectric layer comprising silicon, oxygen, and carbon on the second dielectric layer.