The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Jun. 24, 2003
Masahiro Imade, Osaka, JP;
Tadashi Kadowaki, Osaka, JP;
Hiroyuki Umimoto, Hyogo, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A substrateconsists of a semiconductor layeras an element formation region and an STIas an isolation region. A gate dielectricis provided on the semiconductor layer, and a gate electrodeis provided to extend from the top of the gate dielectricto the top of the STI. A sidewallfor covering the sides of the gate electrodeis provided to extend across the top of the semiconductor layerto the tops of regions of the STIadjacent to the outer edges of the semiconductor layer. The sidewallis employed as an ion implantation mask for forming high-concentration impurity diffusion layerseach serving as a source/drain region.