The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Jul. 08, 2003
Dietrich Bonart, Bad Abbach, DE;
Gerhard Enders, Olching, DE;
Peter Voigt, Hallbergmoos, DE;
Infineon Technologies AG, Munich, DE;
Abstract
The present invention relates to a method for producing a vertical transistor, and to a vertical transistor. A sacrificial gate oxide and a sacrificial gate electrode are used during the production of the vertical transistor to makes it possible to considerably reduce or entirely avoid negative effects that normally result from the production of insulation structures between the vertical transistors. In particular, broadening of the gate oxide at the edge of the gate electrode can be prevented, and the edge of the gate electrode can be influenced deliberately. This allows vertical transistors to be produced having a current/voltage characteristic that can be adjusted specifically. In particular, vertical transistors can be produced having a pronounced corner effect.