The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Dec. 19, 2002
J. Neil Merrett, Starkville, MI (US);
Tamara Isaacs-smith, Auburn, AL (US);
David C. Sheridan, South Burlington, VT (US);
John R. Williams, Opelika, AL (US);
J. Neil Merrett, Starkville, MI (US);
Tamara Isaacs-Smith, Auburn, AL (US);
David C. Sheridan, South Burlington, VT (US);
John R. Williams, Opelika, AL (US);
Auburn University, Auburn University, AL (US);
Abstract
A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.