The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Sep. 04, 2003
Wan-jae Park, Suwon, KR;
Il-goo Kim, Sungnam-shi, KR;
Sang-rok Hah, Seoul, KR;
Kyoung-woo Lee, Seoul, KR;
Wan-Jae Park, Suwon, KR;
Il-Goo Kim, Sungnam-shi, KR;
Sang-Rok Hah, Seoul, KR;
Kyoung-Woo Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A dual damascene process is disclosed. According to the dual damascene process of the present invention, a first recessed region through an intermetal dielectric layer is filled with a bottom protecting layer, and the bottom protecting layer and the intermetal dielectric layer are simultaneously etched to form a second recessed region that has a shallower depth and wider width than the first recessed region on the first recessed region by using an etch gas selectively etches the intermetal dielectric layer with respect to the bottom protecting layer. In other words, the etch selectivity ratio, the intermetal dielectric layer with respect to the bottom protecting layer, is preferably about 0.5 to about 1.5. Thus, it is possible to form a dual damascene structure without the formation of a byproduct or an oxide fence.