The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Feb. 23, 2004
David P. Bour, Cupertino, CA (US);
Tetsuya Takeuchi, Sunnyvale, CA (US);
Ashish Tandon, Sunnyvale, CA (US);
Ying-lan Chang, Cupertino, CA (US);
Michael R. T. Tan, Menlo Park, CA (US);
Scott W. Corzine, Sunnyvale, CA (US);
David P. Bour, Cupertino, CA (US);
Tetsuya Takeuchi, Sunnyvale, CA (US);
Ashish Tandon, Sunnyvale, CA (US);
Ying-Lan Chang, Cupertino, CA (US);
Michael R. T. Tan, Menlo Park, CA (US);
Scott W. Corzine, Sunnyvale, CA (US);
Other;
Abstract
The active region of a long-wavelength light emitting device is made by providing an organometallic vapor phase epitaxy (OMVPE) reactor, placing a substrate wafer capable of supporting growth of indium gallium arsenide nitride in the reactor, supplying a Group III–V precursor mixture comprising an arsenic precursor, a nitrogen precursor, a gallium precursor, an indium precursor and a carrier gas to the reactor and pressurizing the reactor to a sub-atmospheric elevated growth pressure no higher than that at which a layer of indium gallium arsenide layer having a nitrogen fraction commensurate with light emission at a wavelength longer than 1.2 μm is deposited over the substrate wafer.