The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Mar. 23, 2004
James N. Pan, Santa Clara, CA (US);
Paul R. Besser, Sunnyvale, CA (US);
Christy Woo, Cupertino, CA (US);
Minh Van Ngo, Fremont, CA (US);
Jinsong Yin, Sunnyvale, CA (US);
James N. Pan, Santa Clara, CA (US);
Paul R. Besser, Sunnyvale, CA (US);
Christy Woo, Cupertino, CA (US);
Minh Van Ngo, Fremont, CA (US);
Jinsong Yin, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A metal gate electrode is formed with an intrinsic electric field to modify its work function and the threshold voltage of the transistor. Embodiments include forming an opening in a dielectric layer by removing a removable gate, depositing one or more layers of tantalum nitride such that the nitrogen content increases from the bottom of the layer adjacent the gate dielectric layer upwardly. Other embodiments include forming the intrinsic electric field to control the work function by doping one or more metal layers and forming metal alloys. Embodiments further include the use of barrier layers when forming metal gate electrodes.