The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Sep. 29, 2003
Ping Hsu, Jhonghe, TW;
Kuo-chien Wu, Miaoli, TW;
Ping Hsu, Jhonghe, TW;
Kuo-Chien Wu, Miaoli, TW;
NANYA Technology Corporation, Taoyuan, TW;
Abstract
Disclosed is a method for manufacturing deep trench structure comprising the steps of providing a substrate; forming a deep trench in the substrate; forming a nitride layer in the deep trench; filling the deep trench with a first conductive layer; removing a portion of the nitride layer not covered by the first conductive layer; refilling the deep trench with another nitride layer so that the sidewall of the deep trench not covered by the first polymer, is covered; partially removing the refilled nitride layer; forming a collar oxide layer in the deep trench; filling the deep trench with a second conductive layer; removing a portion of the collar oxide layer not covered by the second conductive layer; and filling the deep trench with a third conductive layer.