The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Mar. 04, 2004
Stephen R. Porter, Boise, ID (US);
Stephen R. Porter, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
The antifuse device comprises an insulating layer positioned in the trench, a conductive member positioned above the insulating layer, at least a portion of the conductive member being positioned within the trench, the conductive member adapted to have at least one programming voltage applied thereto, and at least one doped active region formed in the substrate adjacent the trench. The antifuse further comprises at least one conductive contact coupled to the conductive member, and at least one conductive contact coupled to the doped active region. In one illustrative embodiment, the method comprises forming a trench in a semiconducting substrate, forming at least one layer of insulating material in the trench, forming a conductive member in the trench above the at least one layer of insulating material, forming at least one doped active region in the substrate adjacent the trench, forming at least one conductive contact that is coupled to the conductive member and forming at least one conductive contact that is coupled to the at least one doped active region.