The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Jul. 22, 2003
Via-filling material and process for fabricating semiconductor integrated circuit using the material
Teruhiko Kumada, Tokyo, JP;
Toshiyuki Toyoshima, Tokyo, JP;
Hideharu Nobutoki, Tokyo, JP;
Takeo Ishibashi, Tokyo, JP;
Yoshiharu Ono, Tokyo, JP;
Junjiro Sakai, Tokyo, JP;
Teruhiko Kumada, Tokyo, JP;
Toshiyuki Toyoshima, Tokyo, JP;
Hideharu Nobutoki, Tokyo, JP;
Takeo Ishibashi, Tokyo, JP;
Yoshiharu Ono, Tokyo, JP;
Junjiro Sakai, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A via-filling material includes a polymer containing a repeating unit represented bywherein Rone of hydrogen, fluorine, chlorine, bromine, and methyl group; Ris one of hydrogen, a Calkyl group, and a Calkyl group in which the hydrogen is replaced by at least one of fluorine, chlorine, and bromine; and X is —C(═O)O— or —S(═O)O—. This via-filling material does not generate deposits around an opening of a via hole during plasma etching and provides a semiconductor integrated circuit with high reliability, even when a trench wider than the via hole is formed by plasma etching around the via hole filled with the via-filling material.