The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Dec. 03, 2001
Sung-chan Park, Ichon-shi, KR;
Phil-goo Kong, Ichon-shi, KR;
Kuk-han Yoon, Ichon-shi, KR;
Hynix Semiconductor Inc, Ichon-shi, KR;
Abstract
Disclosed is a contact hole forming method capable of reducing parasitic capacitance between a conductive layer patterns, preventing bad contacts caused by mask misalignment and effectively filling an interlayer insulating layer between the conductive layer patterns. The method including forming many conductive layer patterns on a substrate, forming an interlayer insulating layer on a resulting structure where the conductive layer patterns are completed, exposing a conductive layer pattern which at least one sidewall of a contact region between conductive layer patterns is neighboring the contact region, and forming an insulating spacer on the sidewall of the exposed conductive layer pattern.