The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
May. 25, 2005
Yoshimasa Horii, Kawasaki, JP;
Masaaki Nakabayashi, Kawasaki, JP;
Masaki Kurasawa, Kawasaki, JP;
Kou Nakamura, Kawasaki, JP;
Kazuaki Takai, Kawasaki, JP;
Hideyuki Noshiro, Kawasaki, JP;
Shigeyoshi Umemiya, Kawasaki, JP;
Yoshimasa Horii, Kawasaki, JP;
Masaaki Nakabayashi, Kawasaki, JP;
Masaki Kurasawa, Kawasaki, JP;
Kou Nakamura, Kawasaki, JP;
Kazuaki Takai, Kawasaki, JP;
Hideyuki Noshiro, Kawasaki, JP;
Shigeyoshi Umemiya, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A method is disclosed for fabricating a semiconductor device having a memory employing a ferroelectric capacitor in which the orientation of the ferroelectric film is controlled. The method for fabricating the semiconductor device includes a first film deposition process for forming a first ferroelectric layer, and a second film deposition process for forming a second ferroelectric layer on the first ferroelectric layer. The film deposition temperature of the first film deposition process is set to at least 600° C.