The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Jan. 21, 2005
Sripad Sheshagiri Nagarad, Singapore, SG;
Dong Kyun Sohn, Singapore, SG;
Yoke Leng Louis Lim, Singapore, SG;
Siow Lee Chwa, Singapore, SG;
Hsiang Fang Lim, Singapore, SG;
Sripad Sheshagiri Nagarad, Singapore, SG;
Dong Kyun Sohn, Singapore, SG;
Yoke Leng Louis Lim, Singapore, SG;
Siow Lee Chwa, Singapore, SG;
Hsiang Fang Lim, Singapore, SG;
Chartered Semiconductor Manufacturing. LTD, Singapore, SG;
Abstract
A method of manufacturing a charge storage layer for a SONOS memory device. A feature of the embodiment is the first gate layer is formed over the charge storing layer (ONO) before the charge storing layer is patterned. The first gate layer protects the charge storing layer (ONO) from various etches used in the process to pattern the various gate dielectric layers on other regions of substrate.