The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Nov. 15, 2004
Chih-wei Hung, Hsin-Chu, TW;
Cheng-yuan Hsu, Hsin-Chu, TW;
Da Sung, Hsin-Chu, TW;
Chien-chih Du, Hsin-Chu, TW;
Chih-Wei Hung, Hsin-Chu, TW;
Cheng-Yuan Hsu, Hsin-Chu, TW;
Da Sung, Hsin-Chu, TW;
Chien-Chih Du, Hsin-Chu, TW;
Powerchip Semiconductor Corp., Hsin-Chu, TW;
Abstract
A method of forming a flash memory cell. A tunnel oxide layer, a floating gate layer, and a dielectric layer are formed on a substrate. A control gate layer is formed on the dielectric layer and then etched to form two control gates. The control gates are oxidized to form a plurality of second oxide layers on surfaces of the control gates and aside the control gates. The dielectric layer and the floating gate layer are etched by utilizing the second oxide layers as a mask to form a floating gate underneath each of the control gates. A source is formed between the floating gates. The floating gates and the substrate are oxidized to form a plurality of first oxide layers aside the floating gates and form a third oxide layer on a surface of the source.