The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Jun. 17, 2002
Toshiaki Chiyo, Aichi, JP;
Naoki Shibata, Aichi, JP;
Toshiaki Chiyo, Aichi, JP;
Naoki Shibata, Aichi, JP;
Toyoda Gosei Co., Ltd., Aichi, JP;
Abstract
A p-GaN layercomprising materials such as a Group III nitride compound semiconductor is formed on a sapphire substratethrough MOVPE treatment, and a first metal layermade of Co/Au is formed thereon. Then in a planar electron beam irradiation apparatus using plasma, electron beams are irradiated to the p-GaN layerthrough the first metal layer. Accordingly, the first metal layerprevents the surface of the p-GaN layerfrom being damaged and resistivity of the p-GaN layercan be lowered. Next, a second metal (Ni) layeris formed on the first metal layer. And the first metal layeris etched through the second metal layerby using fluoric nitric acid. As a result, the first metal layer is almost completely removed. Then a light-transmitting p-electrodemade of Co/Au is formed thereon. As a result, a p-type semiconductor having decreased contact resistance and lower driving voltage can be obtained and optical transmittance factor of the p-type semiconductor improves.