The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Jun. 22, 2004
Siew Fong Wee, Singapore, SG;
Luey Chwan Liong, Malaysia, SG;
Siew Fong Wee, Singapore, SG;
Luey Chwan Liong, Malaysia, SG;
Tech Semiconductor Singapore Pte. Ltd., Singapore, SG;
Abstract
Both the sensitivity and the reproducibility of processes for measuring low density ion implant doses near a semiconductor surface have been improved by first forming a thermal oxide layer on the surface and then adjusting the implant profile so that it peaks at the semiconductor-oxide interface. Additionally, variations in the initial wafer surface condition have been minimized by controlling the charging dose and sequence prior to performing the measurements.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile