The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2006

Filed:

Sep. 17, 2003
Applicants:

Hongqin Shi, San Jose, CA (US);

Gregory P. Schaadt, Santa Clara, CA (US);

Andrew G. Huibers, Palo Alto, CA (US);

Satyadev R. Patel, Sunnyvale, CA (US);

Inventors:

Hongqin Shi, San Jose, CA (US);

Gregory P. Schaadt, Santa Clara, CA (US);

Andrew G. Huibers, Palo Alto, CA (US);

Satyadev R. Patel, Sunnyvale, CA (US);

Assignee:

Reflectivity, INC, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 26/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention discloses a method and apparatus for removing the sacrificial materials in fabrications of microstructures using a vapor phase etchant recipe having a spontaneous vapor phase chemical etchant. The vapor phase etchant recipe has a mean-free-path corresponding to the minimum thickness of the sacrificial layers between the structural layers of the microstructure. This method is of particular importance in removing the sacrificial layers underneath the structural layers of the microstructure.


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