The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2006
Filed:
Dec. 11, 2001
Christos Dimitrios Dimitrakopoulos, West Harrison, NY (US);
Jeffrey Donald Gelorme, Plainville, CT (US);
Teresita Ordonez Graham, Irvington, NY (US);
Laura Louise Kosbar, Mohegan Lake, NY (US);
Patrick Roland Lucien Malenfant, Clifton Park, NY (US);
Christos Dimitrios Dimitrakopoulos, West Harrison, NY (US);
Jeffrey Donald Gelorme, Plainville, CT (US);
Teresita Ordonez Graham, Irvington, NY (US);
Laura Louise Kosbar, Mohegan Lake, NY (US);
Patrick Roland Lucien Malenfant, Clifton Park, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The invention provides a device comprising an improved n-channel semiconducting film. This film consists of a perylene tetracaboxylic acid diimide compound and was deposited onto substrates by vacuum sublimation. Thin film transistor devices comprising such films as the semiconducting channel exhibit a field effect electron mobility greater than 0.01 cm/Vs and an on/off ratio of 10000 and higher.