The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2006

Filed:

Jul. 22, 2004
Applicants:

Wei-chan Tseng, Tainan, TW;

Tsing-tang Song, Taipei, TW;

Chih-shin Chuang, Hsinchu, TW;

Kuen-yuan Hwang, Taipei, TW;

An-pang Tu, Taipei, TW;

Inventors:

Wei-Chan Tseng, Tainan, TW;

Tsing-Tang Song, Taipei, TW;

Chih-Shin Chuang, Hsinchu, TW;

Kuen-Yuan Hwang, Taipei, TW;

An-Pang Tu, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/023 (2006.01);
U.S. Cl.
CPC ...
Abstract

A positive photoresist with uniform reactivity for use in a thick film lithography process, includes thermal curing during soft-baking and photo dissociation through UV exposure. The positive photoresist comprises a phenolic resin, a resin with acid labile groups, a photoacid generator (PAG), and a reactive monomer with vinyl ether or epoxy group. First, the resins react with the reactive monomer to perform a thermal curing step by soft-baking to form network polymers. In the UV lithography process, the exposed network polymers perform both deprotection and depolymerization simultaneously and are rendered alkali-soluble. The resulting photoresist patterns have a high aspect ratio and resolution profile, due to the good alkali dissolution contrast and uniform reactivity.


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