The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2006

Filed:

May. 14, 2004
Applicants:

William H. Howland, Jr., Wexford, PA (US);

Robert J. Hillard, Avalon, PA (US);

Steven Chi-shin Hung, Palo Alto, CA (US);

Inventors:

William H. Howland, Jr., Wexford, PA (US);

Robert J. Hillard, Avalon, PA (US);

Steven Chi-Shin Hung, Palo Alto, CA (US);

Assignee:

Solid State Measurements, Inc., Pittsburgh, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a method of measuring at least one electrical property of a semiconductor wafer, an elastically deformable conductive contact formed from an electrically conductive coating overlaying an electrically conductive base material is provided. The base material has a first work function and the coating has a second work function. A first electrical contact is formed between the conductive contact and a top surface of a semiconductor wafer. A second electrical contact is formed with the semiconductor wafer. An electrical stimulus is applied between the first and second electrical contacts and a response of the semiconductor wafer to the electrical stimulus is measured. At least one electrical property of the semiconductor wafer is determined from the response.


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