The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
Jan. 13, 2003
Giuseppe LA Rosa, Fishkill, NY (US);
Thomas W. Dyer, Pleasant Valley, NY (US);
Oleg Gluschenkov, Wappingers Falls, NY (US);
Jack A. Mandelman, Flat Rock, NC (US);
Carl J. Radens, LaGrangeville, NY (US);
Alvin W. Strong, Essex Junction, VT (US);
Giuseppe La Rosa, Fishkill, NY (US);
Thomas W. Dyer, Pleasant Valley, NY (US);
Oleg Gluschenkov, Wappingers Falls, NY (US);
Jack A. Mandelman, Flat Rock, NC (US);
Carl J. Radens, LaGrangeville, NY (US);
Alvin W. Strong, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A versatile structure is formed, based on a deep trench, vertical transistor DRAM cell, that forms a conductive extension of the trench electrode in an elongated trench that contacts the lower electrode of the vertical transistor. The structure can be used as a capacitor, as a discrete transistor as a single-transistor amplifier or as a building block for more complex circuits.