Process to form fine features using photolithography and plasma etching

Abstract

Methods of making a sharp pointed structure (), such as a sharp pointed structure in a semiconductor, includes providing a substrate () and then depositing an oxide layer (), such as silicon oxide or silicon nitride, on the substrate () and depositing a low contrast photoresist () on the oxide layer (). The low contrast photoresist () is then exposed to optical energy through a reticle (), with the reticle () having a partially triangular shape (), such as an equilateral triangle with a tip. The low contrast photoresist () is developed and the oxide layer () is etched to form the sharp pointed structure (). Additionally, a film is deposited (), such as a magnetoresistive layer, between the substrate () and the oxide layer (). The low contrast photoresist () is removed and the film () is etched to create a sharp pointed film structure () in the film ().