The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
Jun. 17, 2003
Kazuo Takeda, Tokorozawa, JP;
Jun Gotou, Mobara, JP;
Masakazu Saito, Mobara, JP;
Makoto Ohkura, Fuchu, JP;
Takeshi Satou, Kokubunji, JP;
Hiroshi Fukuda, Kodaira, JP;
Takeo Shiba, Kodaira, JP;
Kazuo Takeda, Tokorozawa, JP;
Jun Gotou, Mobara, JP;
Masakazu Saito, Mobara, JP;
Makoto Ohkura, Fuchu, JP;
Takeshi Satou, Kokubunji, JP;
Hiroshi Fukuda, Kodaira, JP;
Takeo Shiba, Kodaira, JP;
Hiatchi, Ltd., Tokyo, JP;
Abstract
To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is directed to a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light. The process comprises having a means to shape laser light into a linear beam and a means to periodically and spatially modulate the intensity of pulsed laser in the direction of the long axis of the linear beam by passing through a phase-shifting stripy pattern perpendicular to the long axis, and collectively forming for each shot a polycrystalline film composed of crystals which have grown in a certain direction over the entire region irradiated with the linear beam.