The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2006
Filed:
Mar. 14, 2002
Bill H. Quon, Brea, CA (US);
Bill H. Quon, Brea, CA (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
An apparatus () for and method of measuring impedance in a capacitively coupled plasma reactor system (). The apparatus includes a high-frequency RF source () in electrical communication with an upper electrode (). A first high-pass filter () is arranged between the upper electrode and the high-frequency RF source, to block low-frequency, high-voltage signals from the electrode RF power source () from passing through to the impedance measuring circuit A current-voltage probe () is arranged between the high-frequency source and the high-pass filter, and is used to measure the current and voltage of the probe signal with and without the plasma present. An amplifier () is electrically connected to the current-voltage probe, and a data acquisition unit () is electrically connected to the amplifier. A second high-pass filter () is electrically connected to a lower electrode () and to ground, so as to complete the isolation of the high-frequency circuit of the impedance measurement apparatus from the low-frequency, high-voltage circuit of the capacitively coupled plasma reactor system. A method of measuring the plasma impedance using the apparatus of the present invention is also disclosed.