The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2006
Filed:
Jul. 08, 2003
Bruno Ghyselen, Seyssinet, FR;
Cécile Aulnette, Grenoble, FR;
Bénédite Osternaud, Saint Egreve, FR;
S.O.I.Tec Silicon on Insulator Technologies S.A., Bernin, FR;
Abstract
A process for producing a structure of a thin layer of semiconductor material obtained from a composite structure donor wafer. The donor wafer includes a lattice parameter matching layer of a matching substrate that advantageously has an upper layer of semiconductor material having a first lattice parameter. A film of semiconductor material having a second, nominal, lattice parameter that is substantially different from the first lattice parameter is strained by the matching layer. A region of weakness is created in the matching substrate to facilitate splitting. A relaxed layer has a nominal lattice parameter that is substantially identical to the first lattice parameter. The relaxed layer is transferred to a receiving substrate. A number of different wafers can be made by this process.