The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2006
Filed:
Jul. 30, 2004
Brian E. Goodlin, Dallas, TX (US);
Amitava Chatterjee, Plano, TX (US);
Shirin Siddiqui, Plano, TX (US);
Jong S. Yoon, Plano, TX (US);
Brian E. Goodlin, Dallas, TX (US);
Amitava Chatterjee, Plano, TX (US);
Shirin Siddiqui, Plano, TX (US);
Jong S. Yoon, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention provides a method for manufacturing a semiconductor device and method for manufacturing an integrated circuit including the semiconductor device. The method for manufacturing a semiconductor device (), among other steps, includes forming a gate structure () over a substrate (), the gate structure () having sidewall spacers (or) on opposing sidewalls thereof and placing source/drain implants () into the substrate () proximate the gate structure (). The method further includes removing at least a portion of the sidewall spacers (or) and annealing the source/drain implants () to form source/drain regions () after removing the at least a portion of the sidewall spacers (or).