The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2006
Filed:
Nov. 13, 2003
Apostolos T. Voutsas, Vancouver, WA (US);
Robert S. Sposili, Portland, OR (US);
Mark A. Crowder, Portland, OR (US);
Apostolos T. Voutsas, Vancouver, WA (US);
Robert S. Sposili, Portland, OR (US);
Mark A. Crowder, Portland, OR (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
A process of lateral crystallization is provided for increasing the lateral growth length (LGL). A localized region of the substrate is heated for a short period of time. While the localized region of the substrate is still heated, a silicon film overlying the substrate is irradiated to anneal the silicon film to crystallize a portion of the silicon film in thermal contact with the heated substrate region. A COlaser may be used as a heat source to heat the substrate, while a UV laser or a visible spectrum laser is used to irradiate and crystallize the film.