The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2006

Filed:

Jun. 11, 2002
Applicants:

Hung-chih Chen, Hsin Chu, TW;

Chao-hsiung Wang, Taipei, TW;

Niahn-mauh Shih, Miaoli, TW;

Hsien-wei Chin, Hsin Chu, TW;

Inventors:

Hung-Chih Chen, Hsin Chu, TW;

Chao-Hsiung Wang, Taipei, TW;

Niahn-Mauh Shih, Miaoli, TW;

Hsien-Wei Chin, Hsin Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Detecting decay of equipment lens anti-reflective coating (ARC) by detecting undesired residue is disclosed. The undesired residue detected correlates with the decay of the ARC, where a greater amount of undesired residue detected indicates a greater level of the decay. The undesired residue is detected due to stray light reflected by the ARC because of its decay. In the context of semiconductor fabrication equipment, photoresist residue results from negative photoresist on a semiconductor wafer, and may be viewed on one or more scribe lines of a mask within a field of view of the lens of the semiconductor fabrication equipment.


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