The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2006
Filed:
Mar. 18, 2003
Applicants:
Anton Mauder, Kolbermoor, DE;
Alfred Porst, München, DE;
Inventors:
Anton Mauder, Kolbermoor, DE;
Alfred Porst, München, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A high-voltage diode has a dopant concentration of an anode region and a cathode region optimized in terms of basic functions static blocking and conductivity. Dopant concentrations range from 1×10to 3×10dopant atoms per cmfor the anode emitter, especially on its surface 10dopant atoms per cmor more for the cathode emitter and approximately 10dopant atoms per cmfor the blocking function of an anode-side zone.