The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2006
Filed:
May. 25, 2004
Todd P. Lukanc, San Jose, CA (US);
Luigi Capodieci, Santa Cruz, CA (US);
Christopher A. Spence, Sunnyvale, CA (US);
Joerg Reiss, Sunnyvale, CA (US);
Sarah N. Mcgowan, San Francisco, CA (US);
Todd P. Lukanc, San Jose, CA (US);
Luigi Capodieci, Santa Cruz, CA (US);
Christopher A. Spence, Sunnyvale, CA (US);
Joerg Reiss, Sunnyvale, CA (US);
Sarah N. McGowan, San Francisco, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
The invention is a method of manufacturing a semiconductor device and such semiconductor device. The semiconductor device includes an integrated circuit pattern including a horizontal line, a vertical line and a space therebetween, the space including a precise width dimension. The method includes the steps of: forming a photosensitive layer to be patterned, patterning the photosensitive layer to form a pattern including a master horizontal line and a master vertical line without a space therebetween, transferring the pattern to at least one underlying layer using the patterned photosensitive layer, forming a second photosensitive layer over the patterned at least one underlying layer, patterning the second photosensitive layer to form a second pattern including a master space aligned to dissect a horizontal line and a vertical line formed in the at least one underlying layer, and transferring the second pattern to the at least one underlying layer to form a third pattern including a horizontal line and a vertical line with a space therebetween, the space including a precise width dimension.