The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2006

Filed:

Dec. 03, 2004
Applicants:

Jum Soo Kim, Kyungki-Do, KR;

Sung Mun Jung, Kyungki-Do, KR;

Jung Ryul Ahn, Kyungki-Do, KR;

Young Ki Shin, Kyungki-Do, KR;

Young Bok Lee, Kyungki-Do, KR;

Inventors:

Jum Soo Kim, Kyungki-Do, KR;

Sung Mun Jung, Kyungki-Do, KR;

Jung Ryul Ahn, Kyungki-Do, KR;

Young Ki Shin, Kyungki-Do, KR;

Young Bok Lee, Kyungki-Do, KR;

Assignee:

Hynix Semiconductor, Inc., Kyungki-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a flash memory cell. The method includes controlling a wall sacrificial oxidization process, a wall oxidization process and a cleaning process of a trench insulating film that are performed before/after a process of forming the trench insulating film for burying a trench to etch the trench insulating film to a desired space. Therefore, it is possible to secure the coupling ratio of a floating gate by maximum and implement a device of a smaller size.


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