The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2006
Filed:
Oct. 31, 2003
Kyusik Sin, Pleasanton, CA (US);
Matthew R. Gibbons, Dublin, CA (US);
William D. Jensen, Cranberry Township, PA (US);
Hugh Craig Hiner, Fremont, CA (US);
Xizeng Stone Shi, Fremont, CA (US);
Roberto Bez, Milan, IT;
Giulio Casagrande, Milan, IT;
Paolo Cappelletti, Milan, IT;
Kyusik Sin, Pleasanton, CA (US);
Matthew R. Gibbons, Dublin, CA (US);
William D. Jensen, Cranberry Township, PA (US);
Hugh Craig Hiner, Fremont, CA (US);
Xizeng Stone Shi, Fremont, CA (US);
Roberto Bez, Milan, IT;
Giulio Casagrande, Milan, IT;
Paolo Cappelletti, Milan, IT;
WEstern Digital (Fremont), Inc., Lake Forest, CA (US);
STMicroelectronics, S.r.I., Agrate Brianza, IT;
Abstract
A magnetic random access memory (MRAM) device has increased ΔR/R for sensing a state of a pin-dependent tunneling (SDT) device. The MRAM device includes plural transistors connected to a read line for sensing the state of the SDT device. Plural transistors lower an underlying resistance during reading, increasing ΔR/R. The plural transistors can share a source region.