The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2006
Filed:
Dec. 01, 2000
Jeffrey A. Shields, Sunnyvale, CA (US);
Tuan D. Pham, San Jose, CA (US);
Mark T. Ramsbey, Sunnyvale, CA (US);
Yu Sun, Saratogo, CA (US);
Angela T. Hui, Fremont, CA (US);
Maria Chow Chan, San Jose, CA (US);
Jeffrey A. Shields, Sunnyvale, CA (US);
Tuan D. Pham, San Jose, CA (US);
Mark T. Ramsbey, Sunnyvale, CA (US);
Yu Sun, Saratogo, CA (US);
Angela T. Hui, Fremont, CA (US);
Maria Chow Chan, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
In a two-step spacer fabrication process for a non-volatile memory device, a thin oxide layer is deposited on a wafer substrate leaving a gap in the core of the non-volatile memory device. Implantation and/or oxide-nitride-oxide removal can be accomplished through this gap. After implantation, a second spacer is deposited. After the second spacer deposition, a periphery spacer etch is performed. By the above method, a spacer is formed.