The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2006
Filed:
May. 19, 2005
Vincent Chen, Newport Coast, CA (US);
Henry Chen, Irvine, CA (US);
Liming Tsau, Irvine, CA (US);
Jay Shiau, Irvine, CA (US);
Surya Battacharya, Irvine, CA (US);
Akira Ito, Irvine, CA (US);
Vincent Chen, Newport Coast, CA (US);
Henry Chen, Irvine, CA (US);
Liming Tsau, Irvine, CA (US);
Jay Shiau, Irvine, CA (US);
Surya Battacharya, Irvine, CA (US);
Akira Ito, Irvine, CA (US);
Broadcom Corporation, Irvine, CA (US);
Abstract
A one-time programming memory element, capable of being manufactured in a 0.13 μm or below CMOS technology, having a capacitor, or transistor configured as a capacitor, with an oxide layer capable of passing direct gate tunneling current. Also included is a write switch, having first and second switches coupled to the capacitor, and a read switch also coupled to the capacitor. The capacitor/transistor is one-time programmable as an anti-fuse by application of a program voltage across the oxide layer via the write switch to cause direct gate tunneling current to rupture the oxide layer to form a conductive path having resistance of approximately hundreds of ohms or less.