The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2006
Filed:
May. 31, 2002
Martin Wendel, München, DE;
Richard Owen, Regensburg, DE;
Harald Gossner, Riemerling, DE;
Wolfgang Stadler, München, DE;
Philipp Riess, Wappinger, NY (US);
Martin Streibl, Petershausen, DE;
Kai Esmark, München, DE;
Martin Wendel, München, DE;
Richard Owen, Regensburg, DE;
Harald Gossner, Riemerling, DE;
Wolfgang Stadler, München, DE;
Philipp Riess, Wappinger, NY (US);
Martin Streibl, Petershausen, DE;
Kai Esmark, München, DE;
Infineon Technologies AG, Munich, DE;
Abstract
To test the ESD resistance of a semiconductor component, for example of a NOS transistor, which can be used as a PSD protective element in a chip, a direct current characteristic of the semiconductor component is monitored and the ESD resistance of the respective semiconductor component is inferred depending on this. In particular, the direct current failure threshold of the semiconductor component at which an increased leakage current occurs in the non-conducting direction of the semiconductor component can be monitored in operation of the semiconductor component using an applied direct current and the ESD resistance of the semiconductor component inferred depending on a change in this direct current failure threshold.