The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2006
Filed:
Apr. 23, 2004
Gerhard Enders, Olching, DE;
Bjoern Fischer, Munich, DE;
Helmut Schneider, Munich, DE;
Peter Voigt, Hallbergmoos, DE;
Gerhard Enders, Olching, DE;
Bjoern Fischer, Munich, DE;
Helmut Schneider, Munich, DE;
Peter Voigt, Hallbergmoos, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A field-effect transistor includes a semiconductor substrate, a source region formed in the semiconductor substrate, a drain region formed in the semiconductor substrate, a channel region formed in the semiconductor substrate, wherein the source region is connected to a source terminal electrode and the drain region is connected to a drain terminal electrode, wherein the channel region comprises a first narrow width channel region and a second narrow width channel region connected in parallel regarding the source terminal electrode and the drain terminal electrode, and wherein the first narrow width channel region and/or the second narrow width channel region comprise lateral edges narrowing the width of the narrow width channel region is such a way that a channel formation in the narrow width channel region is influenced by a mutually influencing effect of the lateral edges, and a gate electrode arranged above the first and second narrow width channel regions.