The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2006
Filed:
Dec. 11, 2003
Applicant:
Takashi Nakashima, Hyogo, JP;
Inventor:
Takashi Nakashima, Hyogo, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a p-silicon substrate, n-epitaxial growth layers on the p-silicon substrate, a field insulating film at the surface of the n-epitaxial growth layer, an npn transistor formed at the n-epitaxial growth layer, an pnp transistor formed at the n-epitaxial growth layer, a DMOS transistor on the n-epitaxial growth layer, and a resistance. The DMOS transistor includes an n-diffusion layer forming a source, a p-type diffusion layer forming a back gate region, a lightly doped n-type diffusion layer forming a drain, and a heavily doped n-diffusion layer forming the drain.