The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2006
Filed:
Mar. 03, 2004
Applicants:
Chong Ming Lin, Sunnyvale, CA (US);
Ho Yuan Yu, Saratoga, CA (US);
Inventors:
Chong Ming Lin, Sunnyvale, CA (US);
Ho Yuan Yu, Saratoga, CA (US);
Assignee:
Lovoltech, Incorporated, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/80 (2006.01);
U.S. Cl.
CPC ...
Abstract
A protection device for integrated circuits. A complementary well is fabricated in a semiconductor substrate. An enhancement mode junction field effect transistor (JFET) is fabricated in the complementary well. An interface bonding pad is fabricated above the JFET. A source contact is also fabricated in the well. The gate and drain of the JFET are coupled to the interface bonding pad and the source of the JFET is coupled to the substrate.