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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7008863 B1

PDFFull Text
Date of Patent:
Mar. 07, 2006

Filed:

Sep. 03, 2004

Method for forming polycrystalline silicon film

Applicants:

Eok Su Kim, Seoul, KR;

Ho Nyeon Lee, Kyoungki-do, KR;

Myung Kwan Ryu, Kyoungki-do, KR;

Jae Chul Park, Seoul, KR;

Kyoung Seok Son, Seoul, KR;

Jun Ho Lee, Kyoungki-do, KR;

SE Yeoul Kwon, Seoul, KR;

Inventors:

Eok Su Kim, Seoul, KR;

Ho Nyeon Lee, Kyoungki-do, KR;

Myung Kwan Ryu, Kyoungki-do, KR;

Jae Chul Park, Seoul, KR;

Kyoung Seok Son, Seoul, KR;

Jun Ho Lee, Kyoungki-do, KR;

Se Yeoul Kwon, Seoul, KR;

Assignee:

Boe Hydis Technology Co., Ltd., Kyoungki-do, KR;

Attorney:

Ladas & Parry LLP

Primary Examiner:

W David Coleman

Assistant Examiner:

Su C Kim

Int. Cl.
CPC ...
H01L 21/36 (2006.01); H01L 21/205 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed is a method for forming a polycrystalline silicon film by crystallizing an amorphous silicon film. A mask has first to third shot regions having the same length. The first to third shot regions have transmission sections and non-transmission sections, which are alternately aligned. The transmission sections of the first shot region are positioned corresponding to the non-transmission sections of the second shot region, the non-transmission sections of the first shot region are positioned corresponding to the transmission sections of the second shot region, and the transmission sections of the third shot region are aligned corresponding to center portions of the transmission sections of the first and second shot regions. Primary to nlaser irradiation processes are performed with respect to the glass substrate, thereby crystallizing the amorphous silicon film into the polycrystalline silicon film.

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Kim, Eok. (2006). Method for forming polycrystalline silicon film (U.S. Patent No. 7008863). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7008863

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